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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV47 BUV47B DESCRIPTION With TO-3PN package. High voltage. Very high switching speed. APPLICATIONS Suited for 220V switchmode power supply, DC and AC motor control. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER CONDITIONS Open emitter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current AGN NCH I SEM E Open base Open collector NDU ICO VALUE 850 TOR 400 7 9 15 3 UNIT V V V A A A W ae ae Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 90 -65~150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 1.38 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV47 BUV47B CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter sustaining voltage BUV47 BUV47B BUV47 BUV47B BUV47 BUV47B CONDITIONS IE=10mA; IC=0 IC=0.2A; IB=0;L=25mH IC=5A; IB=1A 1.5 IC=6A; IB=1.2A IC=8A; IB=2.5A 3.0 IC=9A; IB=3A IC=5A; IB=1A 1.6 IC=6A; IB=1.2A VCE=850V ;VBE=-2.5V VEB=5V; IC=0 V V V MIN 10 400 TYP. MAX UNIT V V SYMBOL V(BR)EBO VCEO(SUS) VCEsat-1 Collector-emitter saturation voltage VCEsat-2 Collector-emitter saturation voltage VBEsat Base-emitter saturation voltage ICEX IEBO hFE Collector cut-off current Emitter cut-off current DC current gain Turn-on time Storage time Fall time Switching times : ton ts tf AGN NCH I SEM E IC=10A ; VCE=5V UTO OND IC 7 10 R 14 0.15 1.0 mA mA 1.0 IC=5A IB1=- IB2=1.0A VCC=150V 3.0 0.8 |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUV47 BUV47B HAG INC SEM NE UTO OND IC R Fig.2 outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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